InnoScience (Suzhou) Technology Holding Co., Ltd.

InnoScience (Suzhou) Technology Holding Co., Ltd.

2577.HK
InnoScience (Suzhou) Technology Holding Co., Ltd.HK flagHong Kong Stock Exchange
52.75
HKD
-3.50
- -
27.72BMarket Cap
InnoScience (Suzhou) Technology Holding Co., Ltd.
2577.HK
(Hong Kong Stock Exchange)

Recent

price

52.75

P/E

ratio

- -

div

yld

- -

ROIC.AI

2021
2022
2023
2024
2025
FRC
0.08
0.15
0.67
1.01
1.38
Revenue per Share
-3.87
-2.51
-1.25
-1.28
-0.95
Basic EPS, GAAP
-1.91
-1.59
-1.05
-0.62
-1.15
Free Cash Flow per Basic Share
- -
- -
- -
- -
- -
Dividend per Share
-2.33
-4.73
-9.34
-11.21
-11.34
Book Value per Share
-5.21
2.92
1.87
3.33
4.59
Tangible Book Value per Share
879
879
879
819
881
Basic Weighted Avg Shares
68
136
593
828
1,213
Sales/Revenue/Turnover
-1,471.95
-900.27
-170.26
-118.89
-65.68
Operating Margin (%)
265
470
534
516
517
Depreciation Expense
-3,399
-2,205
-1,102
-1,046
-841
Net Income, GAAP
- -
- -
- -
- -
- -
Effective Tax Rate (%)
-4,983.28
-1,619.6
-185.91
-126.22
-69.28
Profit Margin (%)
1,038
916
185
1,464
3,513
Working Capital
1,252
1,668
1,576
1,461
1,955
LT Debt
-4,125
2,960
1,964
2,971
4,211
Total Equity
- -
- -
- -
- -
- -
Return on Invested Capital (%)
- -
- -
- -
- -
- -
Return on Capital (%)
- -
- -
- -
- -
- -
Return on Common Equity (%)

Capital Structure

FRC

in mil. unless spec.
No data availableFinancial data will appear here once available

Working Capital

FRC

in mil. unless spec.
No data availableFinancial data will appear here once available

Growth Rates

FRC

in mil. unless spec.

(avg. rate of change)

10 years
5 years
1 year
Total Equity
- -
- -
41.72%
Free Cash Flow
- -
- -
100.17%
Net Income, GAAP
- -
- -
-19.62%
Sales/Revenue/Turnover
- -
- -
46.45%
Total Cash Common Dividend
- -
- -
- -

Quarterly Revenue

FRC

in mil. unless spec.

Year

Q1
Q2
Q3
Q4
FY
2023
- -
- -
- -
- -
593
2024
- -
- -
- -
- -
828
2025
- -
- -
- -
- -
1,213

Quarterly Earnings Per Share

FRC

in mil. unless spec.

Year

Q1
Q2
Q3
Q4
FY
2023
- -
- -
- -
- -
-1.25
2024
- -
- -
- -
- -
-1.28
2025
- -
- -
- -
- -
-0.95

Quarterly Dividends Per Share

FRC

in mil. unless spec.

Year

Q1
Q2
Q3
Q4
FY
2023
- -
- -
- -
- -
- -
2024
- -
- -
- -
- -
- -
2025
- -
- -
- -
- -
- -
Business
InnoScience (Suzhou) Technology Holding Co., Ltd. engages in the design, development, and production of gallium nitride on silicon (GaN-on-Si) power semiconductor products, serving global markets across consumer electronics, renewable energy, industrial, automotive electronics, and data center applications; it manufactures GaN wafers, discrete chips, integrated circuits (ICs), and modules, and provides related design and packaging capabilities through an integrated in-house IDM model. The company operates primarily from Suzhou, China, with headquarters in Suzhou and a listed presence in Hong Kong (ticker 2577.HK), reflecting its cross-border investor visibility and access to international capital. InnoScience focuses on the GaN power semiconductor ecosystem, delivering product categories including GaN wafers, GaN discrete devices, GaN ICs, GaN modules, and integrated GaN solutions, and serves markets that demand high-efficiency, compact power conversion for consumer devices, energy storage and renewable systems, automotive electronics, data centers, and industrial power applications. The business model emphasizes end-to-end control of design, fabrication, testing, and sales, enabling rapid iteration, quality assurance, and scale, with an IDM approach aimed at reducing supply chain risk and accelerating time-to-market for GaN-based power solutions. Founding year and corporate roots trace to early development in GaN-on-Si technologies, with continuous expansion of production capacity, product portfolio expansion, and strategic alignment with automotive-grade and autonomous capabilities as part of recent corporate evolution. InnoScience has pursued strategic initiatives including partnerships and collaborations to advance automotive-grade GaN offerings, broaden application coverage into LiDAR and in-vehicle systems, and expand its footprint in high-growth markets for electrification and intelligent manufacturing; it has also pursued funding and equity-related activities to support capacity expansion and product launches in the last 1–2 years. The company’s latest changes include product line expansions for low-voltage GaN chips targeting automotive applications, certification and qualification progress toward automotive-grade products, and ongoing geographic and capacity investments to support mass production timelines; these developments align with broader efforts to scale GaN-based power solutions across multiple end markets and regions. In summary, InnoScience positions itself as an IDM‑driven GaN power semiconductor innovator, delivering a comprehensive suite of GaN-on-Si products and modules, supported by ongoing capacity expansion, automotive-grade qualification efforts, and strategic partnerships to capitalize on the growth in electrification, energy efficiency, and next‑generation power electronics across global markets. [Sources: InnoScience HK listed profile and company descriptions, broad GaN-on-Si product discussions, and Hong Kong exchange disclosures on automotive-grade progress and revenue drivers.]