- Business
- AP Memory Technology Corporation (6531.TW), founded in 2011 and headquartered in Zhubei City, Hsinchu County, Taiwan, operates as a fabless semiconductor company specializing in the design, development, licensing, manufacturing, and sale of customized memory-related integrated circuit chip products and technologies. The company offers a comprehensive portfolio of low-power, high-performance memory solutions including Pseudo SRAM (PSRAM) such as IoTRAM series for wearable devices and IoT applications, Ultra High Speed (UHS) PSRAM up to 512Mb with DRAM-like bandwidth, Ultra Low Swing (ULS) PSRAM at 32Mb for ultra-low power needs, low power DRAM (LPDRAM), power-efficient customized DRAM, very high bandwidth memory (VHM) for AI and data-intensive applications, artificial intelligence memory products, silicon capacitor (S-SiCap) solutions, and licensing and design services; these products target functional cell phones, Internet of Things (IoT) devices, wearables, mobile connectivity, high-performance computing, edge computing, and display devices. AP Memory conducts operations globally across China, Japan, Taiwan, Europe, America, and other international markets, with offices in Hangzhou, China, and Beaverton, USA, alongside its corporate headquarters in Taiwan. Recent developments include a 2023 strategic investment of NT$500 million to acquire a 9.56% stake in M3 Technology Inc. (6799.TW) to advance 3D stacking and power management applications through close collaboration; a late-2024 joint collaboration agreement with Blueshift Memory and Syntronix, launched January 2025 under a UK-Taiwan bilateral grant worth approximately £2.77 million (including NT$65 million from Taiwan's Department of Industrial Technology), to integrate Blueshift's high-speed memory IP into enhanced VHM chips for AI and high-performance computing over a 30-month period; and strong revenue growth in 2025 driven by S-SiCap entering mass production, with Q3 2025 consolidated revenue reaching NT$1.495 billion, up significantly year-over-year.