- Business
- SICC Co., Ltd. (688234.SS) engages in the research, development, production, and sales of silicon carbide (SiC) substrate materials principally in China and internationally. The company offers conductive SiC substrates, including n-type and p-type variants in sizes from 6-inch to 12-inch; semi-insulating SiC substrates, also spanning 6-inch to 12-inch diameters; and emerging optical-grade SiC products, serving applications in power electronics such as electric vehicles, photovoltaics, energy storage, power grids, and rail transportation; microwave electronics including 5G communications and advanced telecommunications base stations; as well as AI data centers, AI glasses, smartphones, semiconductor lasers, and optical waveguides. Founded in 2010 and headquartered at No. 99 South Tianyue Road, Huaiyin District, Jinan, Shandong Province, China, SICC operates manufacturing facilities in Jinan and Shanghai, with exports to global markets and a workforce of approximately 1,322 employees.
In recent developments, SICC introduced the industry's first 12-inch SiC substrates in November 2024, followed by announcements in 2025 of 12-inch offerings across n-type, semi-insulating, and p-type products; launched high-quality low-resistance p-type SiC substrates in November 2024 to support high-voltage applications like smart grids and SiC-IGBT devices; entered a strategic cooperation agreement in July 2025 with Sunny OmniLight NanoOptics Co., Ltd. to advance SiC applications in micro-nano optics; signed a memorandum of understanding in August 2025 with Toshiba Electronic Devices & Storage Corporation to collaborate on improving SiC power semiconductor wafer quality and expanding stable supply; and successfully listed H shares (2631.HK) on the Hong Kong Stock Exchange in August 2025 following CSRC approval in June 2025, enhancing its internationalization and financing capabilities.