Episil Technologies Inc. Episil Technologies Inc. (3707.TWO) operates as a semiconductor foundry specializing in discrete and integrated devices, including linear bipolar ICs, high-power MOSFETs, mix-mode integrated circuits, high-voltage CMOS, fast recovery diodes (FRD), transient voltage suppressors (TVS), and compound semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) devices; it provides epitaxial deposition, crystalline processes, and backend services like wafer thinning, testing, and packaging for automotive, green energy, industrial, and power management applications. The company serves fabless design houses and integrated device manufacturers (IDMs) globally, with production facilities focused on 4-inch and 6-inch wafers in Hsinchu Science Park, Taiwan, where it maintains subsidiaries including Episil-Precision Inc. for advanced epitaxial wafers. Founded in 1985 and headquartered at No. 18, Innovation Road I, Hsinchu City, Taiwan, Episil Technologies Inc. targets markets in electric vehicles, renewable energy, AI data centers, and high-efficiency power systems. In recent developments, the company launched its third-generation SiC planar MOSFET platform in July 2024, completed development of fourth-generation planar MOSFET and initiated SiC trench MOSFET with major partners for mass production by end-2025, advanced GaN HEMT G6 products reducing chip size by 50%, and partnered with Vanguard International Semiconductor Corporation in September 2024 for an 8-inch SiC fab expected to ramp up in second-half 2026 following a NT$2.48 billion equity investment. Episil Technologies Inc., formerly Episil Holding Inc., merged with its subsidiary in September 2021, streamlining operations under the current name while expanding capacity in wide-bandgap semiconductors amid growing demand for energy-efficient solutions.