SICC Co., Ltd. Class A

SICC Co., Ltd. Class A

84.50
CNY
-4.02
(-4.54%)
-0.58EPS
84.09BMarket Cap
Apr 29Next Earn
2018 Y
2019 Y
2020 Y
2021 Y
2022 Y
2023 Y
2024 Y
2025 Y
TTM
Revenue per Share
0.32
0.62
1.1
1.26
0.97
3.01
4.15
3.31
3.56
Basic EPS, GAAP
-0.1
-0.47
-1.66
0.23
-0.41
-0.11
0.42
-0.47
-0.57
Free Cash Flow per Basic Share
0.19
0.28
-1.28
-0.58
-2.55
-3.33
-1.18
-0.39
- -
Dividend per Share
0.12
0.09
0.06
- -
- -
- -
0.02
0.06
0.06
Book Value per Share
-0.05
1.29
5.52
5.17
12.22
12.16
12.36
14.8
14.67
Tangible Book Value per Share
-0.5
0.85
4.85
4.58
11.63
11.53
11.72
14.25
14.04
Basic Weighted Avg Shares
430
430
387
391
428
416
426
443
465
Sales/Revenue/Turnover
136
269
425
494
417
1,251
1,768
1,465
1,652
Operating Margin (%)
5.55
-56.92
-142.18
16.99
-53.91
-5.29
9.97
-5.3
-3.5
Depreciation Expense
52
80
107
132
146
223
349
364
- -
Net Income, GAAP
-42
-201
-642
90
-176
-46
179
-208
-266
Effective Tax Rate (%)
- -
- -
- -
- -
- -
- -
- -
- -
- -
Profit Margin (%)
-30.95
-74.73
-151.03
18.21
-42.13
-3.66
10.13
-14.22
-16.08
Working Capital
-663
-175
870
866
3,001
1,500
1,582
3,753
3,273
LT Debt
315
239
- -
1
3
15
86
357
248
Total Equity
-19
499
2,133
2,222
5,250
5,227
5,313
7,175
7,109
Return on Invested Capital (%)
- -
- -
- -
- -
- -
- -
- -
- -
- -
Return on Capital (%)
- -
- -
- -
- -
- -
- -
- -
- -
- -
Return on Common Equity (%)
- -
- -
-48.75
4.13
-4.7
-0.87
3.4
-3.34
-4.27

Capital Structure

CNY

•

in mil. unless spec.
Dec'25
Mar'26
Jun'26
ST Debt
705
806
1,396
LT Borrowings
345
380
238
LT Finance Leases
12
10
10
Preferred Equity and Hybrid Capital
- -
- -
- -
Shares Outstanding
485
485
485
Market Capitalization
43,073
39,690
84,086

Working Capital

CNY

•

in mil. unless spec.
Dec'25
Mar'26
Jun'26
Total Current Assets
5,292
5,324
5,445
Cash, Cash Equivalents & STI
3,287
3,260
3,137
Accounts Receivable, Net
539
530
684
Inventories
1,063
1,172
1,206
Total Current Liabilities
1,540
1,594
2,172
Payables & Accruals
- -
- -
- -
ST Debt
705
806
1,396
Deferred Revenue
- -
- -
- -

Growth Rates

CNY

•

in mil. unless spec.

(avg. rate of change)

10 years
5 years
1 year
Total Equity
- -
35.34%
35.05%
Free Cash Flow
- -
45.39%
-65.6%
Net Income, GAAP
- -
-238.25%
-216.36%
Sales/Revenue/Turnover
- -
44.96%
-17.15%
Total Cash Common Dividend
- -
- -
276.24%

Quarterly Revenue

CNY

•

in mil. unless spec.

Year

Q1
Q2
Q3
Q4
FY
2024
426
486
369
487
1,768
2025
408
386
- -
353
1,465
2026
366
548
- -
- -
- -

Quarterly Earnings Per Share

CNY

•

in mil. unless spec.

Year

Q1
Q2
Q3
Q4
FY
2024
0.11
0.13
0.1
0.08
0.42
2025
0.02
0.01
- -
-0.43
-0.47
2026
-0.13
- -
- -
- -
- -

Quarterly Dividends Per Share

CNY

•

in mil. unless spec.

Year

Q1
Q2
Q3
Q4
FY
2024
- -
- -
0.01
0.01
0.02
2025
0.01
0.01
- -
0.02
0.06
2026
0.01
0.01
- -
- -
- -

Company Description

CEO
Yan Min Zong
Full Time Employees
1,303
Sector
Process industries
Industry
Industrial specialties
Address
No.99 Tianyue South Road Jinan SD China 250118
IPO Date
Jan 12, 2022
Website
sicc.cc
Business
SICC Co., Ltd. (688234.SS) engages in the research, development, production, and sales of silicon carbide (SiC) substrate materials principally in China and internationally. The company offers conductive SiC substrates, including n-type and p-type variants in sizes from 6-inch to 12-inch; semi-insulating SiC substrates, also spanning 6-inch to 12-inch diameters; and emerging optical-grade SiC products, serving applications in power electronics such as electric vehicles, photovoltaics, energy storage, power grids, and rail transportation; microwave electronics including 5G communications and advanced telecommunications base stations; as well as AI data centers, AI glasses, smartphones, semiconductor lasers, and optical waveguides. Founded in 2010 and headquartered at No. 99 South Tianyue Road, Huaiyin District, Jinan, Shandong Province, China, SICC operates manufacturing facilities in Jinan and Shanghai, with exports to global markets and a workforce of approximately 1,322 employees. In recent developments, SICC introduced the industry's first 12-inch SiC substrates in November 2024, followed by announcements in 2025 of 12-inch offerings across n-type, semi-insulating, and p-type products; launched high-quality low-resistance p-type SiC substrates in November 2024 to support high-voltage applications like smart grids and SiC-IGBT devices; entered a strategic cooperation agreement in July 2025 with Sunny OmniLight NanoOptics Co., Ltd. to advance SiC applications in micro-nano optics; signed a memorandum of understanding in August 2025 with Toshiba Electronic Devices & Storage Corporation to collaborate on improving SiC power semiconductor wafer quality and expanding stable supply; and successfully listed H shares (2631.HK) on the Hong Kong Stock Exchange in August 2025 following CSRC approval in June 2025, enhancing its internationalization and financing capabilities.