Xiamen Hengkun New Material Technology Co., Ltd. Class A

Xiamen Hengkun New Material Technology Co., Ltd. Class A

SSSE:688727
34.98
CNY
-2.28
(-6.12%)
0.19EPS
389.46P/E
33.61BMarket Cap
2012 Y
2013 Y
2014 Y
2015 Y
2016 Y
2017 Y
2018 Y
2019 Y
2021 Y
2022 Y
2023 Y
2024 Y
2025 Y
TTM
Revenue per Share
11.42
15.21
9.52
6.48
4.88
5.33
6.26
5.98
0.52
0.96
0.98
1.41
1.68
0.78
Basic EPS, GAAP
0.05
0.17
0.13
0.08
0.03
0.07
0.26
0.1
0.11
0.3
0.24
0.25
0.25
0.19
Free Cash Flow per Basic Share
-0.48
0.5
-0.67
-0.08
0.25
-0.13
-0.42
-2.55
-0.42
-0.36
-0.75
-0.56
-0.62
- -
Dividend per Share
0.22
0.22
0.14
0.08
0.06
0.06
0.11
0.09
0.02
0.01
0.01
0.03
0.03
0.01
Book Value per Share
0.06
0.06
0.13
0.16
0.17
0.17
0.2
0.38
1.33
3.33
3.62
3.93
5.57
5.76
Tangible Book Value per Share
0.05
0.05
0.12
0.16
0.16
0.17
0.19
0.34
1.2
3.14
3.43
3.71
5.39
5.56
Basic Weighted Avg Shares
11
11
24
31
35
35
35
41
274
336
374
388
391
438
Sales/Revenue/Turnover
126
165
225
201
170
188
219
244
141
322
368
548
659
341
Operating Margin (%)
1.97
2.21
4.23
1.67
2.54
4.45
6.94
0.56
24.6
39.68
24.76
19.69
14.66
16.09
Depreciation Expense
4
4
4
4
4
4
5
7
23
35
40
57
76
- -
Net Income, GAAP
1
2
3
2
1
2
9
4
30
101
90
97
98
84
Effective Tax Rate (%)
38.38
5.31
16.91
11.73
2.53
7.89
15.55
- -
12.36
20.48
14.07
9.55
- -
6.82
Profit Margin (%)
0.44
1.12
1.37
1.24
0.61
1.31
4.15
1.67
21.34
31.36
24.43
17.69
14.84
24.63
Working Capital
-13
-14
15
26
27
31
-3
-8
186
578
114
112
1,198
1,153
LT Debt
- -
- -
1
- -
- -
- -
- -
31
33
3
157
211
185
217
Total Equity
24
25
51
63
65
66
80
147
508
1,271
1,382
1,501
2,504
2,586
Return on Invested Capital (%)
- -
1.57
1.86
0.68
-0.87
2.06
7.14
- -
6.29
9.81
5.74
5.16
- -
2.52
Return on Capital (%)
- -
3.63
4.81
2.74
1.11
4.42
11.01
- -
9.04
10.6
5.95
5.44
- -
2.69
Return on Common Equity (%)
- -
8.12
8.38
4.43
1.65
3.8
12.87
3.72
9.22
11.32
6.77
6.72
4.88
3.3

Capital Structure

CNY

•

in mil. unless spec.
Dec'25
Mar'26
Jun'26
ST Debt
721
491
441
LT Borrowings
185
265
217
LT Finance Leases
1
1
- -
Preferred Equity and Hybrid Capital
- -
- -
- -
Shares Outstanding
449
449
449
Market Capitalization
21,464
20,853
33,609

Working Capital

CNY

•

in mil. unless spec.
Dec'25
Mar'26
Jun'26
Total Current Assets
2,208
1,994
1,880
Cash, Cash Equivalents & STI
1,325
1,296
1,222
Accounts Receivable, Net
132
128
137
Inventories
243
278
302
Total Current Liabilities
1,010
728
728
Payables & Accruals
- -
- -
- -
ST Debt
721
491
441
Deferred Revenue
- -
- -
- -

Growth Rates

CNY

•

in mil. unless spec.

(avg. rate of change)

10 years
5 years
1 year
Total Equity
61.46%
96.14%
66.85%
Free Cash Flow
27.44%
27.17%
11.74%
Net Income, GAAP
114.35%
174.14%
0.9%
Sales/Revenue/Turnover
18.16%
33.86%
20.25%
Total Cash Common Dividend
29.34%
50.12%
22.18%

Quarterly Revenue

CNY

•

in mil. unless spec.

Year

Q1
Q2
Q3
Q4
FY
2024
- -
- -
153
157
548
2025
151
143
191
173
659
2026
152
190
- -
- -
- -

Quarterly Earnings Per Share

CNY

•

in mil. unless spec.

Year

Q1
Q2
Q3
Q4
FY
2024
- -
- -
0.06
0.07
0.25
2025
0.07
0.04
0.08
0.05
0.25
2026
0.06
0.13
- -
- -
- -

Quarterly Dividends Per Share

CNY

•

in mil. unless spec.

Year

Q1
Q2
Q3
Q4
FY
2024
- -
- -
0.01
- -
0.03
2025
0.01
0.01
0.01
- -
0.03
2026
0.01
0.01
- -
- -
- -

Company Description

CEO
Rong Kun Yi
Full Time Employees
399
Sector
Electronic technology
Industry
Electronic components
Address
Xiamen China
IPO Date
Nov 18, 2025
Business
Xiamen Hengkun New Material Technology Co., Ltd. is a China-based company engaged in the research, development, manufacture, and distribution of advanced electronic materials and specialty chemicals for the semiconductor and integrated circuit (IC) manufacturing industries. The company specializes in providing critical process materials utilized in photolithography and thin-film deposition for 12-inch semiconductor wafer fabrication, advanced memory chip production (including 3D NAND and DRAM), and logic chip fabrication at technology nodes of 90 nanometers and below. Its comprehensive product portfolio comprises photolithography materials, including spin-on carbon (SOC) hardmask coatings, bottom anti-reflective coatings (BARC), KrF excimer laser photoresists, i-Line photoresists, ArF immersion photoresists, silicon anti-reflective coatings (SiARC), and top coating formulations; ultra-high-purity precursor materials, including tetraethyl orthosilicate (TEOS), high-purity silicon-based precursors, and metal precursors utilized in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes; and specialized electronic formulation chemicals and process gases engineered for integrated circuit fabrication, automotive electronics, and intelligent terminal applications. The company operates specialized research, development, and manufacturing complexes across China, organizing its operations through regional operating subsidiaries. Its production network includes an advanced photolithography materials production base in Hefei, Anhui Province, operated by Anhui Hengkun New Material Technology Co., Ltd.; an ultra-high-purity electronic precursor manufacturing base in Dalian, Liaoning Province, operated by Dalian Hengkun New Material Technology Co., Ltd.; and an advanced photoresist formulation facility in Fujian Province operated by Fujian Hongguang New Material Technology Co., Ltd. The company also maintains research facilities, product introduction centers, and technical service hubs across Xiamen, Shanghai, Wuhan, and Japan to support leading integrated circuit foundries and IDMs across domestic and international markets. Xiamen Hengkun New Material Technology Co., Ltd. was founded on December 10, 2004, and is headquartered in Xiamen, Fujian Province, China. In recent corporate developments, Xiamen Hengkun New Material Technology Co., Ltd. completed its initial public offering (IPO) and listed its Class A shares on the Science and Technology Innovation Board (STAR Market) of the Shanghai Stock Exchange in November 2025 under ticker symbol 688727, raising approximately CNY 1.01 billion to finance the expansion of production lines and advanced material research facilities. Operationally, the company has expanded its commercial engagements across tier-one 12-inch wafer manufacturing facilities, successfully advancing its proprietary ArF immersion photoresists, SiARC coatings, and next-generation precursor materials through customer verification stages into volume commercial delivery, further solidifying its position in critical semiconductor materials localization.