AIXTRON SE
Capital Structure
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in mil. unless spec.Company Description
- CEO
- Felix Jan Grawert
- Full Time Employees
- 1,117
- Sector
- Producer manufacturing
- Industry
- Industrial machinery
- Address
- Dornkaulstrasse 2 Herzogenrath NW Germany 52134
- IPO Date
- Nov 6, 1997
- Website
- aixtron.com
- Similar Companies
- Business
- Aixtron SE provides deposition equipment to the semiconductor industry, specializing in metalorganic chemical vapor deposition (MOCVD) systems for compound semiconductors, silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), indium phosphide (InP), and related materials; its core product portfolio includes the G10 series for GaN and AsP applications, Hyperion systems for 300 mm GaN processing, CRIUS reactors for high-throughput epitaxy, and equipment supporting chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), organic vapor phase deposition (OVPD), and PVPD technologies used in LEDs, lasers, power electronics, displays, photonics, and optoelectronics. The company offers deposition processes, consulting, customer training, technical support, spare parts, and peripheral devices for system operation, serving volume production, research and development, and pre-series manufacturing. Founded in 1983 and headquartered in Herzogenrath, Germany, near Aachen, Aixtron operates manufacturing sites in Germany and the United Kingdom, with subsidiaries, sales offices, and service centers across Asia (primarily China, Taiwan, South Korea, Japan), Europe, and the United States; approximately 68% of its 2022 revenue derived from Asia, 18% from the Americas, and 14% from Europe. Recent developments include joining imec's major 300 mm GaN power electronics program in October 2025 with its Hyperion 300 mm GaN-MOCVD system, reporting preliminary Q3 2025 results with adjusted full-year guidance in October 2025, surging H1 2025 free cash flow to EUR 71.1 million driven by inventory reductions and cost discipline, securing volume orders for G10-AsP technology in AI-driven datacom lasers and SiC from Chinese customers, and installing a CCS MOCVD system at The Ohio State University in November 2025 for next-generation gallium oxide device development.
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