Transphorm, Inc.
NASDAQ Capital MarketCapital Structure
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in mil. unless spec.Working Capital
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in mil. unless spec.Growth Rates
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in mil. unless spec.Quarterly Revenue
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in mil. unless spec.Quarterly Earnings Per Share
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in mil. unless spec.Quarterly Dividends Per Share
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in mil. unless spec.- CEO
- Primit A. Parikh
- Full Time Employees
- 128
- Sector
- Technology
- Industry
- Semiconductors
- Address
- 75 Castilian Drive Goleta CA United States of America 93117
- IPO Date
- Jul 29, 2020
- CIK
- 0001715768
- Website
- transphormusa.com
- Similar Companies
- Business
- Transphorm, Inc. is a semiconductor company specializing in the design, manufacturing, and sale of gallium nitride (GaN) semiconductor components primarily for high voltage power conversion applications. Its core products include GaN field-effect transistors (FETs) in various packages, SuperGaN® devices, and integrated GaN system-in-packages (SiP). These products serve a wide range of markets including smartphone power adapters, fast chargers, data center power supplies, industrial power converters, electric vehicle chargers, and 5G applications, supporting power levels up to 1200 V with high performance and reliability. Transphorm operates globally, with markets including the United States, China, Japan, South Korea, India, and Europe. The company is headquartered in Goleta, California, and was founded in 2007. Recent major developments include Transphorm's acquisition by Renesas Electronics Corporation in June 2024 for $339 million, integrating Transphorm’s GaN technology into Renesas’ portfolio to enhance wide bandgap semiconductor offerings. Post-acquisition, Renesas has introduced 15 new market-ready reference designs combining Transphorm’s GaN products with their embedded processing, power, connectivity, and analog portfolios, targeting automotive on-board battery chargers and electric vehicle powertrain solutions. In early 2024, Transphorm expanded its product line with the launch of two new 650V SuperGaN FET devices in a 4-lead TO-247 package designed for high-power industrial and server applications. Additionally, in 2023, the company developed new patented GaN power transistor technology with Yaskawa Electric featuring a short circuit withstand time of 5 microseconds and released integrated GaN System-in-Packages in collaboration with Weltrend Semiconductor. Transphorm also acquired full interest in the AFSW wafer fabrication facility from GaNovation in 2021, boosting its manufacturing capabilities for high-voltage GaN devices. Transphorm’s product portfolio leverages its proprietary GaN-on-Silicon substrate manufacturing process, which allows efficient, cost-effective, and scalable production suitable for high-volume applications. The company’s technology focuses on reducing power losses and improving energy efficiency across multiple applications including consumer electronics, automotive electrification, industrial power systems, and telecommunications infrastructure. Its strategic moves in acquisitions, partnerships, and new product development reflect an emphasis on strengthening GaN technology leadership and expanding its footprint in the global semiconductor power market. Transphorm’s industry positioning is as a pioneer in GaN semiconductor solutions for power electronics, targeting enterprises that require advanced power conversion components in environments demanding the highest efficiency, reliability, and performance across multiple sectors. The company’s integration into Renesas Electronics further bolsters its global reach and product engineering capabilities in power semiconductors.
Renesas Completes Acquisition of Transphorm
Transphorm Demonstrates a Bidirectional SuperGaN Power Supply with New Reference Design for E-Mobility and Energy/Industrial Markets
St. Charles County Dermatologic Surgery Joins Epiphany Dermatology
トランスフォーム、PCIM 2024にて「SuperGaN」を披露： 高出力システムにおいて、SiCとeモードGaNの機能を凌駕
Transphorm's SuperGaN at PCIM 2024: Surpassing SiC and e-mode GaN Capabilities in High Power Systems
Transphorm and Weltrend Semiconductor Release New Integrated GaN System-in-Packages
Transphorm and Weltrend Semiconductor Release New Integrated GaN System-in-Packages
URGENT: The M&A Class Action Firm Encourages Shareholders of Transphorm, Inc. to Take Action Before the Merger Vote on April 9, 2024 - TGAN
TRANSPHORM INVESTOR ALERT by the Former Attorney General of Louisiana: Kahn Swick & Foti, LLC Investigates Adequacy of Price and Process in Proposed Sale of Transphorm, Inc. - TGAN
Transphorm Announces Fiscal 2024 Third Quarter Results and Provides Business Update
Transphorm at APEC 2024: SuperGaN Innovation for Low to High Power Applications
TRANSPHORM MERGER ALERT: Shareholders Concerned About Sale to Renesas Should Contact Julie & Holleman LLP About Ongoing Investigation
Transphorm Announces Two 4-Lead TO-247 Devices, Expanding Product Portfolio for High Power Server, Renewable, Industrial Power Conversion
Transphorm to Present at the 26th Annual Needham Growth Conference
TRANSPHORM INVESTOR ALERT by the Former Attorney General of Louisiana: Kahn Swick & Foti, LLC Investigates Adequacy of Price and Process in Proposed Sale of Transphorm, Inc. - TGAN
Shareholder Alert: Ademi LLP investigates whether Transphorm, Inc. has obtained a Fair Price in its transaction with Renesas
TGAN SPECIAL ALERT: Transphorm Shareholders Seeking More Money Should Contact Julie & Holleman Regarding Sale to Renesas
TGAN Stock Alert: Halper Sadeh LLC Is Investigating Whether the Sale of Transphorm, Inc. Is Fair to Shareholders
Transphorm and Weltrend Semiconductor's New GaN System-In-Package Delivers Competitive Advantage by Supporting Multiple Power Levels
Transphorm Releases Two Battery Charger Reference Designs Ideal for Two- and Three-Wheeled Electric Vehicles