Nanya Technology Corporation
TTWSE:2408414.00
TWD
-22.50
(-5.15%)
ISIN
TW0002408002
Return %
Stock
S&P 500
1Y
276.36
14.39
3Y
488.90
81.42
5Y
566.67
68.62
Capital Structure
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in mil. unless spec.Growth Rates
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in mil. unless spec.Quarterly Revenue
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in mil. unless spec.Quarterly Earnings Per Share
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in mil. unless spec.Company Description
- CEO
- Pei Ing Lee
- Full Time Employees
- 1,237
- Sector
- Electronic technology
- Industry
- Semiconductors
- Address
- No. 98, Nanlin Road New Taipei City TX Taiwan 243
- IPO Date
- Aug 17, 2000
- Website
- nanya.com
- Similar Companies
- Business
- Nanya Technology Corporation (2408.TW), founded in 1995 and headquartered in Taoyuan, Taiwan, engages in the research, development, design, manufacturing and sales of dynamic random access memory (DRAM) products; it ranks fourth globally in the DRAM industry and operates sales and distribution networks in Taiwan, the United States, Europe, Japan and China. The company offers a comprehensive portfolio of JEDEC-compliant standard DRAM including DDR2, DDR3, DDR3L, DDR4 and DDR5 at densities from 512Mb to 16Gb; low power DRAM such as LPDDR2 through LPDDR5/5X for portable devices, automotive infotainment and IoT applications; known good die (KGD) products across DDR and LPDDR families with customized redesign rules and wide temperature ranges; multi-chip packages (MCP) integrating low power DRAM with NAND or controllers like MCP LPDDR2/4X and eMCP/uMCP variants; DRAM modules encompassing RDIMM, UDIMM, SODIMM, CSODIMM, CUDIMM and LPCAMM2 for PCs, notebooks and servers; and Elixir-branded DDR3/DDR4 memory solutions emphasizing high speed, density and low power for computing systems. Nanya targets consumer electronics, telecommunications, servers, data centers, automotive, office equipment and edge AI applications with its products serving smartphones, personal computers, cloud infrastructure, self-driving vehicles and smart home/factory/office systems. Recent developments include the completion of design and pilot production for 16Gb DDR5 using second-generation 10nm-class (1B) technology targeting mass production ramp-up; construction since 2022 of a new NT$300 billion fab in Taishan District with phased expansion to 45,000 wafers monthly for advanced 10nm-class output and over NT$70 billion annual value; an August 2025 joint venture with Etron Technology investing NT$500 million (80:20 ownership) in Hsinchu to develop custom high-bandwidth memory (HBM) for edge AI in PCs, smartphones, robotics and autos with launches planned by end-2026; a December 2024 investment of up to NT$660 million in subsidiary PieceMakers Technology for tailored HBM design; and collaborations with Formosa Advanced Technologies on 3D TSV processes and multi-chip stacking to enter customized HBM markets.