Aixtron Se
Other OTCCapital Structure
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in mil. unless spec.Company Description
- CEO
- Felix J. Grawert
- Full Time Employees
- 1,117
- Sector
- Technology
- Industry
- Semiconductors
- Address
- Dornkaulstrasse 2 Herzogenrath NW Germany 52134
- IPO Date
- Jul 2, 2014
- Website
- aixtron.com
- Similar Companies
- Business
- Aixtron SE, founded in 1983 as a spin-off from RWTH Aachen University and headquartered in Herzogenrath, Germany, provides deposition equipment to the semiconductor industry worldwide, including in Asia, Europe and the United States; the company develops, produces and installs metalorganic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), organic vapor phase deposition (OVPD) and close space sublimation systems for production-scale and research & development applications serving power electronics (silicon carbide (SiC) for electric vehicle inverters and wind power, gallium nitride (GaN) for fast chargers and AI power delivery), optoelectronics (LEDs, microLEDs for displays, automotive lighting and AR glasses), lasers (for 3D sensing, LiDAR and data communication), vertical-cavity surface-emitting lasers (VCSELs) and other compound semiconductor materials. Aixtron SE offers process engineering, consulting, training, customer support and after-sales service; its G10 system family, comprising G10-SiC, G10-GaN, G10-AsP and others, accounts for around 50% of equipment revenue and supports high-volume production. Recent developments include acquisition of an Italian production site near Turin in 2024 to expand manufacturing capacity, opening of a new Innovation Center for 300mm wafer systems in 2024, successful placement of the Hyperion pilot system for 300mm GaN wafers with leading customers in 2024, participation in imec's 300mm GaN power electronics program in 2025 with the Hyperion 300mm GaN-MOCVD system, fulfillment of a major G10-SiC volume order from China in first-half 2025, revenue growth of 22% in Q2 2025 driven by AI data center lasers and continued market entry in SiC while maintaining leadership in GaN and optoelectronics.
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